sales@hasco-inc.com 
888-498-3242 
Description
« Click Here for the gAPZ0092A Datasheet
gotMIC's gAPZ0092A is a high power e-Band GaAs pHEMT MMIC covering 81 GHz to 86 GHz. The gAPZ0092A is a bare die GaAs pHEMT four-stage power amplifier MMIC optimized for 81-86 GHz from gotMIC. It is ideal for high power e-band radar applications and long-range spectral efficient point-to-point communication. The MMIC thickness is 50 um. A dxf file is also available on request for use with CAD tools. This MMIC can be both solder mounted and silver epoxy attached to an electrically grounded plane with excellent thermal properties. If you require a fully packaged part please refer to the gotMIC gBL0016, it utilizes this MMIC in a fully integrated housing.
Additional details about gAPZ0092 data plots, performance, assembly, DC Bypass, bonding and general information about gotMIC please refer to the datasheet or contact Sales / Technical Support. For all other gotMIC products please click the link below.
gAPZ0092A-25GP = 25 pieces in 1 Gel Pack
Click Here for the following quantities:
gAPZ0092A-2GP = 2 pieces in 1 Gel Pack
gAPZ0092A-5GP = 5 pieces in 1 Gel Pack
gAPZ0092A-10GP = 10 pieces in 1 Gel Pack
| IMPORTANT NOTICE: All orders for gotMIC parts require a completed FORM BIS-711 (STATEMENT BY ULTIMATE CONSIGNEE AND PURCHASER). Please click here to Download FORM BIS-711. Please complete the form and submit to sales@hasco-inc.com once your order is placed. Export of gotMIC parts is prohibited. |
Product Specifications
Parameter |
Minimum |
Typical |
Maximum |
|
Frequency Range (Optimized) |
81 GHz |
|
86 GHz |
|
Frequency Range (Extended) |
76 GHz |
|
90 GHz |
|
Gain |
|
19 dB |
|
|
Gain Temperature Slope |
-0.05 dB/C |
||
|
PSAT (3dB Compression) |
28 dBm |
||
|
PAE at PSAT |
15% | ||
|
Operating Temperature |
-40°C | +85°C |
- Frequency, Max:
- 86 GHz
- Frequency, Min:
- 81 GHz
- Gain:
- 19 dB
- Gel Pack Quantity:
- 25
- Product Type:
- Power
PRODUCT DETAILS 
« Click Here for the gAPZ0092A Datasheet
gotMIC's gAPZ0092A is a high power e-Band GaAs pHEMT MMIC covering 81 GHz to 86 GHz. The gAPZ0092A is a bare die GaAs pHEMT four-stage power amplifier MMIC optimized for 81-86 GHz from gotMIC. It is ideal for high power e-band radar applications and long-range spectral efficient point-to-point communication. The MMIC thickness is 50 um. A dxf file is also available on request for use with CAD tools. This MMIC can be both solder mounted and silver epoxy attached to an electrically grounded plane with excellent thermal properties. If you require a fully packaged part please refer to the gotMIC gBL0016, it utilizes this MMIC in a fully integrated housing.
Additional details about gAPZ0092 data plots, performance, assembly, DC Bypass, bonding and general information about gotMIC please refer to the datasheet or contact Sales / Technical Support. For all other gotMIC products please click the link below.
gAPZ0092A-25GP = 25 pieces in 1 Gel Pack
Click Here for the following quantities:
gAPZ0092A-2GP = 2 pieces in 1 Gel Pack
gAPZ0092A-5GP = 5 pieces in 1 Gel Pack
gAPZ0092A-10GP = 10 pieces in 1 Gel Pack
| IMPORTANT NOTICE: All orders for gotMIC parts require a completed FORM BIS-711 (STATEMENT BY ULTIMATE CONSIGNEE AND PURCHASER). Please click here to Download FORM BIS-711. Please complete the form and submit to sales@hasco-inc.com once your order is placed. Export of gotMIC parts is prohibited. |
Product Specifications
Parameter |
Minimum |
Typical |
Maximum |
|
Frequency Range (Optimized) |
81 GHz |
|
86 GHz |
|
Frequency Range (Extended) |
76 GHz |
|
90 GHz |
|
Gain |
|
19 dB |
|
|
Gain Temperature Slope |
-0.05 dB/C |
||
|
PSAT (3dB Compression) |
28 dBm |
||
|
PAE at PSAT |
15% | ||
|
Operating Temperature |
-40°C | +85°C |
